An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing effects within charge channel control description. By degradation-based model, straightforward extraction methodology, not provided before, is enabled applying concept well-known Y-function to \textit{I-V} device characteristics. method works regardless gate architecture. An accurate description experimental data fabricated devices achieved with underlying equation using parameters. evaluation resistance, parameters here, has been also provided.